Single crystal epitaxial layers of A1,Gal -,As solid solutions and GaAs-Al,Gal -,As heterojunctions were obtained on gallium arsenide substrates by crystallization from a solution of arsenic in a gallium-aluminium melt,. Multilayer structures of the type p(n)GaAs-p(n)Al,~Gal-,,As-p(n)Al,,Gal-., As-n
Thermodynamic aspects of the preparation of AlAs and Ga1−xAlxAs epitaxial layers in hydride and chloride systems
✍ Scribed by Jindřich Leitner; Josef Stejskal; Vratislav Flemr; Petr Voňka
- Publisher
- Elsevier Science
- Year
- 1994
- Tongue
- English
- Weight
- 610 KB
- Volume
- 144
- Category
- Article
- ISSN
- 0022-0248
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