Thermodynamic Analysis on Molecular Beam Epitaxy of GaN, InN and AlN
β Scribed by Koukitu, Akinori; Seki, Hisashi
- Book ID
- 121481819
- Publisher
- Institute of Pure and Applied Physics
- Year
- 1997
- Tongue
- English
- Weight
- 684 KB
- Volume
- 36
- Category
- Article
- ISSN
- 0021-4922
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## Abstract An investigation of InN layers grown on GaN templates by molecular beam epitaxy (MBE) has been carried out by Xβray diffraction (XRD), Raman spectroscopy (RS) and photoluminescence (PL). A good correlation is noticed between their crystalline quality and optical properties. The best sam
## Abstract The strain distribution and defects in a graded AlN/GaN heterostructure comprising AlN layers from 3 nm up to 100 nm grown by plasmaβassisted MBE were studied using transmission electron microscopy techniques. Gradual strain relaxation was observed as well as strain partitioning between
## Abstract Temporal evolution of surface morphology in AlN epilayers grown by NH~3~βsource molecular beam epitaxy on the GaN/(0001) Al~2~O~3~ epitaxial templates was correlated with changes in the degree of the residual strain and the layer thickness. They began to crack for the thickness as thin