𝔖 Bobbio Scriptorium
✦   LIBER   ✦

Thermodynamic Analysis on Molecular Beam Epitaxy of GaN, InN and AlN

✍ Scribed by Koukitu, Akinori; Seki, Hisashi


Book ID
121481819
Publisher
Institute of Pure and Applied Physics
Year
1997
Tongue
English
Weight
684 KB
Volume
36
Category
Article
ISSN
0021-4922

No coin nor oath required. For personal study only.


πŸ“œ SIMILAR VOLUMES


Investigation of InN layers grown by mol
✍ Vilalta-Clemente, A. ;Mutta, G. R. ;Chauvat, M. P. ;Morales, M. ;Doualan, J. L. πŸ“‚ Article πŸ“… 2010 πŸ› John Wiley and Sons 🌐 English βš– 232 KB

## Abstract An investigation of InN layers grown on GaN templates by molecular beam epitaxy (MBE) has been carried out by X‐ray diffraction (XRD), Raman spectroscopy (RS) and photoluminescence (PL). A good correlation is noticed between their crystalline quality and optical properties. The best sam

Strain relaxation in AlN/GaN heterostruc
✍ Dimitrakopulos, G. P. ;Komninou, Ph. ;Kehagias, Th. ;Sahonta, S.-L. ;Kioseoglou, πŸ“‚ Article πŸ“… 2008 πŸ› John Wiley and Sons 🌐 English βš– 384 KB

## Abstract The strain distribution and defects in a graded AlN/GaN heterostructure comprising AlN layers from 3 nm up to 100 nm grown by plasma‐assisted MBE were studied using transmission electron microscopy techniques. Gradual strain relaxation was observed as well as strain partitioning between

Strain-relaxation in NH3-source molecula
✍ Koyama, T. ;Sugawara, M. ;Uchinuma, Y. ;Kaeding, J. F. ;Sharma, R. ;Onuma, T. ;N πŸ“‚ Article πŸ“… 2006 πŸ› John Wiley and Sons 🌐 English βš– 228 KB

## Abstract Temporal evolution of surface morphology in AlN epilayers grown by NH~3~‐source molecular beam epitaxy on the GaN/(0001) Al~2~O~3~ epitaxial templates was correlated with changes in the degree of the residual strain and the layer thickness. They began to crack for the thickness as thin