Molecular beam epitaxy of GaN, AlN, InN and related alloys: from two- to three-dimensional growth mode

Self-regulating mechanism of InN growth

Self-regulating mechanism of InN growth on GaN(0001) by molecular beam epitaxy; from nanostructures to films

✍ Dimakis, E. ;Iliopoulos, E. ;Tsagaraki, K. ;Georgakilas, A. 📂 Article 📅 2006 🏛 John Wiley and Sons 🌐 English ⚖ 321 KB

## Abstract The surface kinetics of InN growth on GaN(0001) by plasma assisted molecular beam epitaxy was investigated. The surface coverage of the GaN(0001) surface by InN islands and the corresponding islands' growth rate along the [0001] direction, were studied as a function of substrate tempera