Thermionic field emission in Pt-Al0.45Ga0.55N Schottky photodiode

✍ Scribed by Cheng, C. J. ;Si, J. J. ;Ding, J. X. ;Zhang, X. F. ;Zhang, L. ;Zhao, L. ;Lu, Z. X. ;Sun, W. G.

• Book ID: 105365090
• Publisher: John Wiley and Sons
• Year: 2009
• Tongue: English
• Weight: 301 KB
• Volume: 206
• Category: Article
• ISSN: 0031-8965
• DOI: 10.1002/pssa.200824356

✦ Synopsis

Abstract

Fabrication and current transport mechanisms dominant of Pt–Al~0.45~Ga~0.55~N Schottky photodiode grown on sapphire by metalorganic chemical vapor deposition are reported. Transport has been modeled using thermionic field emission theory. The ideality factor decreases from 2.18 to 1.50, while the barrier height increases from 0.82 eV to 1.14 eV with increasing temperature at 198–323 K. There is a linear relationship between the barrier heights and the ideality factors of the Schottky contact. The ln (I) versus V curve at small forward current are almost parallel in this temperature range, which can be well explained by thermionic field emission theory with the characteristic energy E~00~ of 36.0 meV. (© 2009 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)