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Thermionic field emission at electrodeposited Ni–Si Schottky barriers

✍ Scribed by M.E. Kiziroglou; X. Li; A.A. Zhukov; P.A.J. de Groot; C.H. de Groot

Book ID
108271658
Publisher
Elsevier Science
Year
2008
Tongue
English
Weight
263 KB
Volume
52
Category
Article
ISSN
0038-1101

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## Abstract Fabrication and current transport mechanisms dominant of Pt–Al~0.45~Ga~0.55~N Schottky photodiode grown on sapphire by metalorganic chemical vapor deposition are reported. Transport has been modeled using thermionic field emission theory. The ideality factor decreases from 2.18 to 1.50,