The field emission properties of Ti-DLC films in diode and coplanar device structures were studied. An emission current density of 1.14 A/cm 2 could be obtained at an applied field of 33 V/mm and the threshold field was 24 V/mm for the coplanar emission structure. The silicon substrate was found to
✦ LIBER ✦
Thermal stability and electrical properties of Ag–Ti films and Ti/Ag/Ti films prepared by sputtering
✍ Scribed by Kawamura, M.; Zhang, Z.; Kiyono, R.; Abe, Y.
- Book ID
- 123163126
- Publisher
- Elsevier Science
- Year
- 2013
- Tongue
- English
- Weight
- 882 KB
- Volume
- 87
- Category
- Article
- ISSN
- 0042-207X
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In this work we have studied the influence of thermal annealing on the structural and electrical properties of W-Ti thin films, deposited on n-type (100) silicon wafers. The films were deposited by d.c. sputtering from a 90:10 wt.% W-Ti target, using Ar ions, to a thickness of ~170 nm. After deposit