𝔖 Bobbio Scriptorium
✦   LIBER   ✦

Thermal model of pulsed electron beam annealing in silicon

✍ Scribed by G. Chemisky; D. Barbier; A. Laugier


Book ID
107789578
Publisher
Elsevier Science
Year
1984
Tongue
English
Weight
522 KB
Volume
66
Category
Article
ISSN
0022-0248

No coin nor oath required. For personal study only.


πŸ“œ SIMILAR VOLUMES


Pulsed electron beam for silicon anneali
✍ G Leggieri; A Luches; V Nassisi; A Perrone; MR Perrone; G Majni; F Nava πŸ“‚ Article πŸ“… 1982 πŸ› Elsevier Science 🌐 English βš– 205 KB

The characteristics of an electron beam generator are given. It produces pulses up to 50 kV. currents up to 20 kA, with a pulse length of about 50 ns. It was designed and built for annealing of thin metal layers deposited on single crystal silicon wafers.

Pulsed electron-beam annealing of ion-im
πŸ“‚ Article πŸ“… 1980 πŸ› Elsevier Science 🌐 English βš– 162 KB

width of the energy distribution curve, ranging from about 50 to 15 eV FWHM, is found to depend on the applied voltage VA and the length-to-diameter ratio (+ of the channel, and to vary with output current. The results can be explained in terms of the normalized field strength near the output end of