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Thermal evolution of surface blistering and exfoliation due to ion-implanted hydrogen monomers into Si〈1 1 1〉

✍ Scribed by J.H. Liang; C.H. Hu; C.Y. Bai; D.S. Chao; C.M. Lin

Book ID
116833955
Publisher
Elsevier Science
Year
2012
Tongue
English
Weight
409 KB
Volume
407
Category
Article
ISSN
0921-4526

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Influence of post-annealing time on blistering evolution in Si 〈1 0 0〉 implanted with high-fluence H ions
✍ J.H. Liang; C.Y. Bai; D.S. Chao; C.M. Lin 📂 Article 📅 2008 🏛 Elsevier Science 🌐 English ⚖ 249 KB

The influence of post-annealing time on blistering characteristics induced by 5 Â 10 16 cm À2 ion-implanted H in Si <1 0 0> was studied in terms of the formation and growth of blisters. Ion energies consisted of 40 and 100 keV. Post-annealing treatments were carried out using furnace annealing (FA)