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Thermal degeneration of Mo and Pt silicon Schottky diodes

✍ Scribed by E. Calleja; J. Garrido; J. Piqueras; A. Martinez

Publisher
Elsevier Science
Year
1980
Tongue
English
Weight
626 KB
Volume
23
Category
Article
ISSN
0038-1101

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πŸ“œ SIMILAR VOLUMES

Structural and electrical properties of
Structural and electrical properties of Mo/n-GaN Schottky diodes
✍ Reddy, V. Rajagopal ;Ramesh, C. K. ;Choi, Chel-Jong πŸ“‚ Article πŸ“… 2006 πŸ› John Wiley and Sons 🌐 English βš– 286 KB

## Abstract The electrical and structural properties of molybdenum (Mo) Schottky contact to n‐type GaN (4.07 Γ— 10^18^ cm^–3^) have been investigated before and after annealing at 600 Β°C. Measurements show that the Schottky barrier height of the as‐deposited sample was 0.81 eV (__I__–__V__) and 1.02