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Device processing and characterisation of high temperature silicon carbide Schottky diodes

✍ Scribed by K.V. Vassilevski; I.P. Nikitina; N.G. Wright; A.B. Horsfall; A.G. O’Neill; C.M. Johnson

Publisher
Elsevier Science
Year
2006
Tongue
English
Weight
239 KB
Volume
83
Category
Article
ISSN
0167-9317

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