## Abstract The electrical and structural properties of molybdenum (Mo) Schottky contact to n‐type GaN (4.07 × 10^18^ cm^–3^) have been investigated before and after annealing at 600 °C. Measurements show that the Schottky barrier height of the as‐deposited sample was 0.81 eV (__I__–__V__) and 1.02
Electrical properties of Mo-cadmium chalcogenide Schottky barrier diodes
✍ Scribed by Bikbaev, V. B. ;Karpinskas, S. Č. ;Vaitkus, J. J.
- Publisher
- John Wiley and Sons
- Year
- 1983
- Tongue
- English
- Weight
- 561 KB
- Volume
- 75
- Category
- Article
- ISSN
- 0031-8965
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