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Electrical properties of Au–Sb/p-GaSe:Gd Schottky barrier diode

✍ Scribed by Songül Duman

Publisher
Elsevier Science
Year
2009
Tongue
English
Weight
320 KB
Volume
12
Category
Article
ISSN
1369-8001

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Electrical properties of GaSb Schottky d
Electrical properties of GaSb Schottky diodes and p-n junctions
✍ A.Y. Polyakov; M. Stam; A.G. Milnes; T.E. Schlesinger 📂 Article 📅 1992 🏛 Elsevier Science 🌐 English ⚖ 592 KB

The electrical properties of Schottky diodes and p-n junctions on GaSb ((100), doped with 2 x 10 t7 cm-~ tellurium) were examined. Capacitance-voltage measurements at 300 K show barrier heights of 0.65 eV (Al), 0.6 eV (Au, In, Pd), 0.5 eV (Ga) and 0.42 eV (Sb). The barrier heights tend to track the