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Electrical and photovoltaic properties of Ag/p-AgGaSe2 polycrystalline thin film Schottky barrier diodes

✍ Scribed by Y. Satyanarayana Murthy; O. Mahammad Hussain; S. Uthanna; B. Srinivasulu Naidu; P. Jayarama Reddy

Publisher
Elsevier Science
Year
1991
Tongue
English
Weight
304 KB
Volume
152
Category
Article
ISSN
0375-9601

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Characteristics of Al / p-AgGaTe2 polycr
Characteristics of Al / p-AgGaTe2 polycrystalline thin film Schottky barrier diode
✍ S. S. Patel; B. H. Patel; T. S. Patel 📂 Article 📅 2008 🏛 John Wiley and Sons 🌐 English ⚖ 121 KB

## Abstract An Al/p‐AgGaTe~2~ polycrystalline thin film schottky barrier diode have been prepared by flash‐evaporation of p‐AgGaTe~2~ onto a pre‐deposited film of aluminium. The current‐voltage, capacitance‐voltage and photoresponse of the diode have been investigated. The important physical parame