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ChemInform Abstract: Characteristics of Al/p-Cu0.5Ag0.5InSe2 Polycrystalline Thin Film Schottky Barrier Diodes.

✍ Scribed by G. Venkata Rao; G. Hema Chandra; O. M. Hussain; S. Uthanna; B. Srinivasulu Naidu

Publisher
John Wiley and Sons
Year
2010
Weight
31 KB
Volume
32
Category
Article
ISSN
0931-7597

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Characteristics of Al / p-AgGaTe2 polycr
Characteristics of Al / p-AgGaTe2 polycrystalline thin film Schottky barrier diode
✍ S. S. Patel; B. H. Patel; T. S. Patel 📂 Article 📅 2008 🏛 John Wiley and Sons 🌐 English ⚖ 121 KB

## Abstract An Al/p‐AgGaTe~2~ polycrystalline thin film schottky barrier diode have been prepared by flash‐evaporation of p‐AgGaTe~2~ onto a pre‐deposited film of aluminium. The current‐voltage, capacitance‐voltage and photoresponse of the diode have been investigated. The important physical parame