Characteristics of Al / p-AgGaTe2 polycrystalline thin film Schottky barrier diode

✍ Scribed by S. S. Patel; B. H. Patel; T. S. Patel

• Publisher: John Wiley and Sons
• Year: 2008
• Tongue: English
• Weight: 121 KB
• Volume: 43
• Category: Article
• ISSN: 0232-1300
• DOI: 10.1002/crat.200711041

✦ Synopsis

Abstract

An Al/p‐AgGaTe~2~ polycrystalline thin film schottky barrier diode have been prepared by flash‐evaporation of p‐AgGaTe~2~ onto a pre‐deposited film of aluminium. The current‐voltage, capacitance‐voltage and photoresponse of the diode have been investigated. The important physical parameter such as barrier height of the fabricated diode was derived from these measurements. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)