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Characteristics of Al/p-Cu0.5Ag0.5InSe2 Polycrystalline Thin Film Schottky Barrier Diodes

โœ Scribed by G. Venkata Rao; G. Hema Chandra; O.M. Hussain; S. Uthanna; B. Srinivasulu Naidu

Publisher
John Wiley and Sons
Year
2001
Tongue
English
Weight
85 KB
Volume
36
Category
Article
ISSN
0232-1300

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Characteristics of Al / p-AgGaTe2 polycr
Characteristics of Al / p-AgGaTe2 polycrystalline thin film Schottky barrier diode
โœ S. S. Patel; B. H. Patel; T. S. Patel ๐Ÿ“‚ Article ๐Ÿ“… 2008 ๐Ÿ› John Wiley and Sons ๐ŸŒ English โš– 121 KB

## Abstract An Al/pโ€AgGaTe~2~ polycrystalline thin film schottky barrier diode have been prepared by flashโ€evaporation of pโ€AgGaTe~2~ onto a preโ€deposited film of aluminium. The currentโ€voltage, capacitanceโ€voltage and photoresponse of the diode have been investigated. The important physical parame