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Photoluminescence and photocurrent of Schottky diodes based on silicon nanocrystallites

✍ Scribed by A. Vivas Hernandez; T. V. Torchynska; G. Polupan; S. Jimenez Sandoval; R. Pena Sierra; M. Estrada Cueto; G. R. Paredes Rubio

Publisher
John Wiley and Sons
Year
2005
Tongue
English
Weight
157 KB
Volume
2
Category
Article
ISSN
1862-6351

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Silicon pn diodes were fabricated by ion implantation of B and P ions with different doses and subsequent annealing processes. Room temperature photoluminescence (PL) were investigated and the factors affecting the PL intensity were analyzed. Results show that both kinds of pn diodes have PL peak ce