Thermal conductivity and nanoindentation hardness of as-prepared and oxidized porous silicon layers
β Scribed by Zhenqian Fang; Ming Hu; Wei Zhang; Xurui Zhang; Haibo Yang
- Publisher
- Springer US
- Year
- 2007
- Tongue
- English
- Weight
- 561 KB
- Volume
- 19
- Category
- Article
- ISSN
- 0957-4522
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Silicon-on insulator (SOI) wafers, consisting of 22 lm thick p-type silicon epitaxial layer grown on 280 lm thick n-type (1 1 1) silicon substrate, were electrochemically etched in hydrofluoric acid (HF) to produce porous silicon (PS) samples. The pores of different size and different depth were obt
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