𝔖 Bobbio Scriptorium
✦   LIBER   ✦

Thermal conductivity and nanoindentation hardness of as-prepared and oxidized porous silicon layers

✍ Scribed by Zhenqian Fang; Ming Hu; Wei Zhang; Xurui Zhang; Haibo Yang


Publisher
Springer US
Year
2007
Tongue
English
Weight
561 KB
Volume
19
Category
Article
ISSN
0957-4522

No coin nor oath required. For personal study only.


πŸ“œ SIMILAR VOLUMES


Structural, optical and electrical chara
✍ M. Balarin; O. Gamulin; M. Ivanda; M. KosoviΔ‡; D. RistiΔ‡; M. RistiΔ‡; S. MusiΔ‡; K πŸ“‚ Article πŸ“… 2009 πŸ› Elsevier Science 🌐 English βš– 763 KB

Silicon-on insulator (SOI) wafers, consisting of 22 lm thick p-type silicon epitaxial layer grown on 280 lm thick n-type (1 1 1) silicon substrate, were electrochemically etched in hydrofluoric acid (HF) to produce porous silicon (PS) samples. The pores of different size and different depth were obt

Structure and optical properties of poro
✍ M. Balarin; O. Gamulin; M. Ivanda; V. Djerek; O. Celan; S. Music; M. Ristic; K. πŸ“‚ Article πŸ“… 2007 πŸ› Elsevier Science 🌐 English βš– 743 KB

Porous silicon (PSi) samples were prepared by electrochemical etching of silicon-on-insulator wafers, consisting of 45 m thick p-type (111) silicon epitaxial layer grown on a thin 100 nm SiO 2 layer on silicon substrates, by varying the concentration of 48% HF in ethanol solution. Within the epitaxi