๐”– Bobbio Scriptorium
โœฆ   LIBER   โœฆ

Partial oxidation of porous silicon by thermal process: study of structure and electronic defects

โœ Scribed by V. Morazzani; M. Chamarro; A. Grosman; C. Ortega; S. Rigo; J. Siejka; H.J. von Bardeleben

Publisher
Elsevier Science
Year
1993
Tongue
English
Weight
371 KB
Volume
57
Category
Article
ISSN
0022-2313

No coin nor oath required. For personal study only.

๐Ÿ“œ SIMILAR VOLUMES

Defect Structure of Nitrogen Plasma Trea
Defect Structure of Nitrogen Plasma Treated Porous Silicon Studied Using Electron Paramagnetic Resonance
โœ Ehara, T. ;Arai, T. ๐Ÿ“‚ Article ๐Ÿ“… 2000 ๐Ÿ› John Wiley and Sons ๐ŸŒ English โš– 118 KB ๐Ÿ‘ 1 views

We describe the defect properties in nitrogen plasma treated porous silicon (PS) studied using electron paramagnetic resonance (EPR). We consider the dependence of the paramagnetic properties of the defects on the structure of PS. The nitrogen plasma treatment changed the structure of PS. After the

Electronic structure study of the initia
Electronic structure study of the initiation routes of the dimethyl sulfide oxidation by OH
โœ Nรบria Gonzรกlez-Garcรญa; ร€ngels Gonzรกlez-Lafont; Josรฉ M. Lluch ๐Ÿ“‚ Article ๐Ÿ“… 2005 ๐Ÿ› John Wiley and Sons ๐ŸŒ English โš– 220 KB

## Abstract In the present work the potential energy surface (PES) corresponding to the different initiation routes of the oxidation mechanism of DMS by hydroxyl radical in the absence of O~2~ has been studied, and connections among the different stationary points have been established. Singleโ€poin