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Thermal annealing behavior of defects induced by ion implantation in thermally grown SiO2 films

✍ Scribed by Kwang Soo Seol; Toshifumi Karasawa; Yoshimichi Ohki; Hiroyuki Nishikawa; Makoto Takiyama

Publisher: Elsevier Science
Year: 1997
Tongue: English
Weight: 190 KB
Volume: 36
Category: Article
ISSN: 0167-9317
DOI: 10.1016/s0167-9317(97)00046-4

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