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Thermal Analysis of the Double-Crucible Method in Continuous Silicon Czochralski Processing

✍ Scribed by Ono, Naoki

Book ID
126969206
Publisher
The Electrochemical Society
Year
1993
Tongue
English
Weight
604 KB
Volume
140
Category
Article
ISSN
0013-4651

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The dissolution of the silica crucible by the silicon melt acts as a source of oxygen doping in the growth of silicon single crystals by the Czochralski-method. Literature data on the dissolution rate of silica in silicon melts are available up to now only from ex-situ measurements. In the present w