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Effect of annealing atmosphere on the recombination activity of copper precipitates formed by rapid thermal process in conventional and nitrogen-doped Czochralski silicon wafers

✍ Scribed by Wang, Weiyan; Yang, Deren; Ma, Xiangyang; Zeng, Yuheng; Que, Duanlin

Book ID: 120184945
Publisher: American Institute of Physics
Year: 2008
Tongue: English
Weight: 642 KB
Volume: 103
Category: Article
ISSN: 0021-8979
DOI: 10.1063/1.2830859

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