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A new method for studying the influence of thermal treatment on occupancy percentages of oxygen atoms in the (Czochralski) silicon lattice

✍ Scribed by H. Erramli; M.A. Misdaq; R. Elassali; R. Charik; G. Blondiaux

Book ID: 113286743
Publisher: Elsevier Science
Year: 1995
Tongue: English
Weight: 330 KB
Volume: 103
Category: Article
ISSN: 0168-583X
DOI: 10.1016/0168-583x(95)00622-2

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