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Theory of strain states in InAs quantum dots and dependence on their capping layers

✍ Scribed by Nabetani, Y.; Matsumoto, T.; Sasikala, G.; Suemune, I.


Book ID
121812821
Publisher
American Institute of Physics
Year
2005
Tongue
English
Weight
833 KB
Volume
98
Category
Article
ISSN
0021-8979

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Self-assembled InAs/(In,Ga)As quantum dots were embedded into n-or p-type Schottky diodes to investigate the conduction and valence band states, respectively. The samples were prepared by molecular beam epitaxy, and capacitance-voltage (C(V)) spectroscopy as well as photoluminescence (PL) measuremen