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Influence of capping layer thickness on electronic states in self assembled MOVPE grown InAs quantum dots in GaAs

✍ Scribed by P. Hazdra; J. Oswald; V. Komarnitskyy; K. Kuldová; A. Hospodková; E. Hulicius; J. Pangrác

Book ID: 108269007
Publisher: Elsevier Science
Year: 2009
Tongue: English
Weight: 776 KB
Volume: 46
Category: Article
ISSN: 0749-6036
DOI: 10.1016/j.spmi.2008.12.002

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