Theoretical studies of the capacitance-voltage characteristics of metal-ferroelectric-GaN structures

✍ Scribed by Jinzhi Ran; Jianhong Yang; Xueyuan Cai

• Publisher: John Wiley and Sons
• Year: 2011
• Tongue: English
• Weight: 143 KB
• Volume: 25
• Category: Article
• ISSN: 0894-3370
• DOI: 10.1002/jnm.818

✦ Synopsis

SUMMARY

We have simulated the capacitance versus voltage characteristics (C‐V) of metal‐ferroelectric‐gallium nitride (GaN metal‐ferroelectric‐semiconductor) structures and found useful design rules for improving the devices' performance. The thickness effects of ferroelectric film on the C‐V are studied. When the ferroelectric Pb(Zr, Ti)O3 thickness is no more than 100 nm, the GaN metal‐ferroelectric‐semiconductor structures can approach inversion just under 5 V, which is the generally applied voltage used in semiconductor‐based integrated circuits. This marked improvement of C‐V behaviors is mainly due to the high dielectric constant and large polarization of the ferroelectric gate oxide. Copyright © 2011 John Wiley & Sons, Ltd.