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Capacitance-voltage characteristics of a metal-carbon-silicon structure

✍ Scribed by K.K. Chan; G.A.J. Amaratunga; S.P. Wong; V.S. Veerasamy

Publisher
Elsevier Science
Year
1993
Tongue
English
Weight
458 KB
Volume
36
Category
Article
ISSN
0038-1101

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## SUMMARY We have simulated the capacitance versus voltage characteristics (C‐V) of metal‐ferroelectric‐gallium nitride (GaN metal‐ferroelectric‐semiconductor) structures and found useful design rules for improving the devices' performance. The thickness effects of ferroelectric film on the C‐V ar