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Theoretical and experimental investigation of Si nanocrystal memory device with HfO2 high-k tunneling dielectric

โœ Scribed by Jong Jin Lee; Xuguang Wang; Weiping Bai; Nan Lu; Dim-Lee Kwong


Book ID
114617202
Publisher
IEEE
Year
2003
Tongue
English
Weight
854 KB
Volume
50
Category
Article
ISSN
0018-9383

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There has been a search for alternative dielectrics with significantly increased dielectric constants, K, which increases physical thickness in proportion to K, and therefore would significantly reduce direct tunneling. However, increases in K to values of 15-25 in transition metal and rare earth ox