✦ LIBER ✦
Gate capacitances behavior of nanometer FD SOI CMOS devices with HfO2 high-k gate dielectric considering vertical and fringing displacement effects using 2-D Simulation
✍ Scribed by Yu-Sheng Lin; Chia-Hong Lin; Kuo, J.B.; Ke-Wei Su
- Book ID
- 114618274
- Publisher
- IEEE
- Year
- 2006
- Tongue
- English
- Weight
- 731 KB
- Volume
- 53
- Category
- Article
- ISSN
- 0018-9383
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