Electrical Characteristics of Memory Devices With a High- k HfO2 Trapping Layer and Dual SiO2/Si3N4 Tunneling Layer

✍ Scribed by Ying Qian Wang; Wan Sik Hwang; Gang Zhang; Samudra, G.; Yee-Chia Yeo; Won Jong Yoo

• Book ID: 114618911
• Publisher: IEEE
• Year: 2007
• Tongue: English
• Weight: 737 KB
• Volume: 54
• Category: Article
• ISSN: 0018-9383
• DOI: 10.1109/ted.2007.904396