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Theoretical analysis of silicon surface roughness induced by plasma etching

โœ Scribed by R. K. Tyagi


Book ID
120896718
Publisher
Allerton Press, Inc.
Year
2013
Tongue
English
Weight
169 KB
Volume
49
Category
Article
ISSN
1068-3755

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๐Ÿ“œ SIMILAR VOLUMES


Mechanisms of surface roughness induced
โœ Ronaldo D Mansano; Patrick Verdonck; Homero S Maciel ๐Ÿ“‚ Article ๐Ÿ“… 1997 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 321 KB

## Deep trenches were etched in silicon with SF, plasmas in a simple RIE system. Two process factors influence directly the silicon surface roughness generated by these processes: the dc bias voltage and the presence of oxygen. In general, the roughness increases when the dc bias voltage becomes mor