The Valence Band Offset of an Al 0.17 Ga 0.83 N/GaN Heterojunction Determined by X-Ray Photoelectron Spectroscopy
β Scribed by Wan, Xiao-Jia; Wang, Xiao-Liang; Xiao, Hong-Ling; Wang, Cui-Mei; Feng, Chun; Deng, Qing-Wen; Qu, Shen-Qi; Zhang, Jing-Wen; Hou, Xun; Cai, Shu-Jun; Feng, Zhi-Hong
- Book ID
- 123617541
- Publisher
- Institute of Physics
- Year
- 2013
- Tongue
- English
- Weight
- 726 KB
- Volume
- 30
- Category
- Article
- ISSN
- 0256-307X
No coin nor oath required. For personal study only.
π SIMILAR VOLUMES
## Abstract The valence band offset (VBO) at a InN/In~0.3~Ga~0.7~N(0001) as well as HfO~2~/InN(0001) heterojunction is investigated by Xβray photoelectron spectroscopy using monochromated AlKΞ± radiation. The InN and In~0.3~Ga~0.7~N films were grown using plasmaβassisted molecular beam epitaxy, wher
## Abstract Hexagonal Ge~3~N~4~ layer was prepared on Ge surface by __in situ__ direct atomic source nitridation and it is promising buffer layer to grow GaN on Ge (111). The valence band offset (VBO) of GaN/Ge~3~N~4~/Ge heterojunctions is determined by Xβray photoemission spectroscopy. The valence