Determination of MBE grown wurtzite GaN/Ge3N4/Ge heterojunctions band offset by X-ray photoelectron spectroscopy

✍ Scribed by Mahesh Kumar; Mohana K. Rajpalke; Basanta Roul; Thirumaleshwara N. Bhat; A. T. Kalghatgi; S. B. Krupanidhi

• Publisher: John Wiley and Sons
• Year: 2011
• Tongue: English
• Weight: 287 KB
• Volume: 249
• Category: Article
• ISSN: 0370-1972
• DOI: 10.1002/pssb.201147318

✦ Synopsis

Abstract

Hexagonal Ge~3~N~4~ layer was prepared on Ge surface by in situ direct atomic source nitridation and it is promising buffer layer to grow GaN on Ge (111). The valence band offset (VBO) of GaN/Ge~3~N~4~/Ge heterojunctions is determined by X‐ray photoemission spectroscopy. The valence band (VB) of Ge~3~N~4~ is found to be 0.38 ± 0.04 eV above the GaN valance band and 1.14 ± 0.04 eV below the Ge. The GaN/Ge~3~N~4~ and Ge~3~N~4~/Ge are found type‐II and type‐I heterojunctions, respectively. The exact measurements of the VBO and conduction band offset (CBO) are important for use of GaN/Ge~3~N~4~/Ge (111) heterosystems.