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The use of doping spikes in GaN Gunn diodes

✍ Scribed by Macpherson, R. F.; Dunn, G. M.


Book ID
118743079
Publisher
American Institute of Physics
Year
2008
Tongue
English
Weight
433 KB
Volume
93
Category
Article
ISSN
0003-6951

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## Abstract Planar Gunn diodes operating above 100 GHz fabricated in GaAs/AlGaAs heterojunction structures with single and double δ‐doping layers on each side of GaAs channel are numerically studied and experimentally demonstrated. The results show enhanced RF power and oscillation frequency when d