✦ LIBER ✦

Threading dislocation reduction in transit region of GaN terahertz Gunn diodes

✍ Scribed by Li, Liang; Yang, Lin-An; Zhang, Jin-Cheng; Xue, Jun-Shuai; Xu, Sheng-Rui; Lv, Ling; Hao, Yue; Niu, Mu-Tong

Book ID: 111961467
Publisher: American Institute of Physics
Year: 2012
Tongue: English
Weight: 754 KB
Volume: 100
Category: Article
ISSN: 0003-6951
DOI: 10.1063/1.3685468

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

Modeling of Threading Dislocation Reduct

Modeling of Threading Dislocation Reduction in Growing GaN Layers

✍ Mathis, S.K. ;Romanov, A.E. ;Chen, L.F. ;Beltz, G.E. ;Pompe, W. ;Speck, J.S. 📂 Article 📅 2000 🏛 John Wiley and Sons 🌐 English ⚖ 255 KB 👁 2 views

Mass transport and the reduction of thre

Mass transport and the reduction of threading dislocation in GaN

✍ Shugo Nitta; Michihiko Kariya; Takayuki Kashima; Shigeo Yamaguchi; Hiroshi Amano 📂 Article 📅 2000 🏛 Elsevier Science 🌐 English ⚖ 775 KB

Threading dislocation density reduction

Threading dislocation density reduction in two-stage growth of GaN layers

✍ Bougrov, V. E. ;Odnoblyudov, M. A. ;Romanov, A. E. ;Lang, T. ;Konstantinov, O. V 📂 Article 📅 2006 🏛 John Wiley and Sons 🌐 English ⚖ 216 KB

## Abstract A theoretical approach is proposed to reduce the density of threading dislocations (TDs) in (0001) oriented growth of GaN layers. The approach can be realized by repeated stages of growth surface roughening (stage I) and flattening (stage II). Fundamentals of the approach include the fo

Reduction of threading dislocations in G

Reduction of threading dislocations in GaN on in-situ meltback-etched Si substrates

✍ Hiroyasu Ishikawa; Keita Shimanaka 📂 Article 📅 2011 🏛 Elsevier Science 🌐 English ⚖ 821 KB

We report a novel growth technique of GaN films on Si substrates using a metalorganic chemical vapor deposition. First, Ga droplets are deposited on a Si substrate by feeding trimethylgallium. And then the substrate is heated at 1080 1C, resulting in the formation of recesses on its surface by meltb

Reduction of threading dislocations in G

Reduction of threading dislocations in GaN overgrowth by MOCVD on TiN porous network templates

✍ Yun, F. ;Fu, Y. ;Moon, Y. T. ;Özgür, Ü. ;Xie, J. Q. ;Doğan, S. ;Morkoç, H. ;Ino 📂 Article 📅 2005 🏛 John Wiley and Sons 🌐 English ⚖ 134 KB

## Abstract GaN overlayers for the purpose of reducing extended defects have been grown by MOCVD on porous network of TiN thin layers which in turn were achieved by __in situ__ nitridation of thin Ti layers (20 nm and 10 nm) on a GaN template. TEM analyses performed for the GaN layer with 20 nm TiN