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Reduction of threading dislocations in GaN on in-situ meltback-etched Si substrates

✍ Scribed by Hiroyasu Ishikawa; Keita Shimanaka

Publisher
Elsevier Science
Year
2011
Tongue
English
Weight
821 KB
Volume
315
Category
Article
ISSN
0022-0248

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✦ Synopsis

We report a novel growth technique of GaN films on Si substrates using a metalorganic chemical vapor deposition. First, Ga droplets are deposited on a Si substrate by feeding trimethylgallium. And then the substrate is heated at 1080 1C, resulting in the formation of recesses on its surface by meltback etching. Finally, a GaN film is grown on the Ga-induced meltback-etched surface using a high-temperaturegrown AlN intermediate layer. After the growth of the GaN film, 0.5-1-mm-diameter pits were observed on the GaN surface. A cathodoluminescence image reveals that low-threading-dislocation-density regions were successfully grown around the pits.

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