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Threading dislocation reduction in GaAs films on thin Si substrates

✍ Scribed by Kenzo Maehashi; Hisao Nakashima; Frank Bertram; Peter Veit; Jürgen Christen

Publisher
Elsevier Science
Year
1998
Tongue
English
Weight
153 KB
Volume
2
Category
Article
ISSN
1386-9477

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✍ Hiroyasu Ishikawa; Keita Shimanaka 📂 Article 📅 2011 🏛 Elsevier Science 🌐 English ⚖ 821 KB

We report a novel growth technique of GaN films on Si substrates using a metalorganic chemical vapor deposition. First, Ga droplets are deposited on a Si substrate by feeding trimethylgallium. And then the substrate is heated at 1080 1C, resulting in the formation of recesses on its surface by meltb