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Mass transport and the reduction of threading dislocation in GaN

✍ Scribed by Shugo Nitta; Michihiko Kariya; Takayuki Kashima; Shigeo Yamaguchi; Hiroshi Amano; Isamu Akasaki


Book ID
108416170
Publisher
Elsevier Science
Year
2000
Tongue
English
Weight
775 KB
Volume
159-160
Category
Article
ISSN
0169-4332

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πŸ“œ SIMILAR VOLUMES


Threading dislocation density reduction
✍ Bougrov, V. E. ;Odnoblyudov, M. A. ;Romanov, A. E. ;Lang, T. ;Konstantinov, O. V πŸ“‚ Article πŸ“… 2006 πŸ› John Wiley and Sons 🌐 English βš– 216 KB

## Abstract A theoretical approach is proposed to reduce the density of threading dislocations (TDs) in (0001) oriented growth of GaN layers. The approach can be realized by repeated stages of growth surface roughening (stage I) and flattening (stage II). Fundamentals of the approach include the fo

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We report a novel growth technique of GaN films on Si substrates using a metalorganic chemical vapor deposition. First, Ga droplets are deposited on a Si substrate by feeding trimethylgallium. And then the substrate is heated at 1080 1C, resulting in the formation of recesses on its surface by meltb