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The atomic configurations of the a→ threading dislocation in GaN

✍ Scribed by A. Béré; J. Chen; P. Ruterana; A. Serra; G. Nouet

Book ID: 117626704
Publisher: Elsevier Science
Year: 2002
Tongue: English
Weight: 108 KB
Volume: 24
Category: Article
ISSN: 0927-0256
DOI: 10.1016/s0927-0256(02)00180-5

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## Abstract A theoretical approach is proposed to reduce the density of threading dislocations (TDs) in (0001) oriented growth of GaN layers. The approach can be realized by repeated stages of growth surface roughening (stage I) and flattening (stage II). Fundamentals of the approach include the fo