Enhancement of power and frequency in Planar Gunn diodes by introducing extra delta-doping layers
✍ Scribed by Chong Li; Ata Khalid; Sonia H.Paluchowski Caldwell; Neil J. Pilgrim; Martin C. Holland; Geoffrey M. Dunn; David R. S. Cumming
- Publisher
- John Wiley and Sons
- Year
- 2011
- Tongue
- English
- Weight
- 288 KB
- Volume
- 53
- Category
- Article
- ISSN
- 0895-2477
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✦ Synopsis
Abstract
Planar Gunn diodes operating above 100 GHz fabricated in GaAs/AlGaAs heterojunction structures with single and double δ‐doping layers on each side of GaAs channel are numerically studied and experimentally demonstrated. The results show enhanced RF power and oscillation frequency when double δ‐doping technique was used. By using a two‐dimensional numerical simulation tool, the conduction band profile, electron concentration in the epitaxy layers and current‐voltage characteristics are investigated. Simulation results indicate that extra δ‐doping layers increase electron confinement in the conducting channel, therefore higher current levels are obtained. Simulated current‐voltage characteristics in both cases agree well with experimental results. © 2011 Wiley Periodicals, Inc. Microwave Opt Technol Lett, 2011; View this article online at wileyonlinelibrary.com. DOI 10.1002/mop.26071