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The Thermal Etching of GaP

โœ Scribed by S. Kocsis; E. Lendvay

Publisher
John Wiley and Sons
Year
1974
Tongue
English
Weight
692 KB
Volume
9
Category
Article
ISSN
0232-1300

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โœฆ Synopsis

Abstract

The thermal decomposition and etching of GaP have been investigated. The {111} GaP surfaces were treated in 10^โˆ’2^โ€”10^โˆ’5^ torr vacuum, and in hydrogen and argon atmosphere, in a temperature range of 900โ€”1300 K. Under the different experimental conditions the etched surfaces show different morphological characteristics and polar properties, from which the suitable range for thermal etching or polishing can be choosen. All experiments show that the evaporation mechanism in vacuum and argon is similar, but in hydrogen the process is different.

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