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The surface boundary conditions in GaN/AlGaN/GaN transistor heterostructures

✍ Scribed by Gladysiewicz, M.; Kudrawiec, R.; Misiewicz, J.; Cywinski, G.; Siekacz, M.; Wolny, P.; Skierbiszewski, C.


Book ID
121337124
Publisher
American Institute of Physics
Year
2011
Tongue
English
Weight
467 KB
Volume
98
Category
Article
ISSN
0003-6951

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Refractive index changes in AlGaN/GaN he
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Using the envelope wavefunction approximation and the compact density matrix formalism, we have investigated theoretically the linear and nonlinear refractive index changes in AlGaN/GaN quantum well heterostructures aimed for designing electro-optical modulators. The confining potential in the heter