Silicon nitride (SiN x ) films were prepared by ion-assisted deposition process. The films were analyzed by measurement of scanning electron microscopy (SEM), Fourier transform infrared spectrometry (FTIR), Xray photoelectron spectrometry, spectrophotometer, and ellipsometer measurements. The effect
✦ LIBER ✦
The structural, optical and secondary electron emission properties of MgO and Mg–O–Cs thin films prepared by ion beam assisted deposition
✍ Scribed by Soon Joon Rho; Soon Moon Jeong; Hong Koo Baik; Kie Moon Song
- Book ID
- 114086794
- Publisher
- Elsevier Science
- Year
- 1999
- Tongue
- English
- Weight
- 175 KB
- Volume
- 355-356
- Category
- Article
- ISSN
- 0040-6090
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