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The role of unintentional acceptor concentration on the threshold voltage of modulation-doped field-effect transistors

✍ Scribed by Krantz, R.J.; Bloss, W.L.

Book ID: 114535060
Publisher: IEEE
Year: 1989
Tongue: English
Weight: 376 KB
Volume: 36
Category: Article
ISSN: 0018-9383
DOI: 10.1109/16.19950

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