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Threshold voltage shift in organic field effect transistors by dipole monolayers on the gate insulator

โœ Scribed by Pernstich, K. P.; Haas, S.; Oberhoff, D.; Goldmann, C.; Gundlach, D. J.; Batlogg, B.; Rashid, A. N.; Schitter, G.

Book ID
120814212
Publisher
American Institute of Physics
Year
2004
Tongue
English
Weight
489 KB
Volume
96
Category
Article
ISSN
0021-8979

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Short-time-scale threshold voltage shift
Short-time-scale threshold voltage shifts in organic field-effect transistors caused by dipoles on insulator surface
โœ Kouji Suemori; Misuzu Taniguchi; Sei Uemura; Manabu Yoshida; Satoshi Hoshino; No ๐Ÿ“‚ Article ๐Ÿ“… 2011 ๐Ÿ› Elsevier ๐ŸŒ English โš– 251 KB

We previously reported that dipoles on the surface of the gate insulator layer in organic transistors cause time decay of the drain current on time scales of less than 0.1 s from the application of the gate voltage. In this study, we investigated the relationship between the time decay and magnitude