The structural properties as well as epitaxial growth peculiarities of thin film silicon-based heterostructures (SBH) are described with emphasis put on MBE growth of these structures. More detailed considerations are presented for the strained-layer Si 1-x Ge x /Si heterostructures. The 4.17% latti
โฆ LIBER โฆ
The role of strain in silicon-based molecular beam epitaxy
โ Scribed by Ya-Hong Xie; Paul J. Silverman
- Publisher
- Elsevier Science
- Year
- 1995
- Tongue
- English
- Weight
- 210 KB
- Volume
- 157
- Category
- Article
- ISSN
- 0022-0248
No coin nor oath required. For personal study only.
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