The role of oxygen and nitrogen at the SiO2SiC interface
✍ Scribed by A. Gölz; S. Scharnholz; H. Kurz
- Publisher
- Elsevier Science
- Year
- 1997
- Tongue
- English
- Weight
- 234 KB
- Volume
- 36
- Category
- Article
- ISSN
- 0167-9317
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Thermal oxidation of 6H-SiC was investigated by ion beam analysis techniques. The mechanisms of oxygen transport and incorporation were accessed by sequential oxidations in dry O 2 enriched or not in the 18 O isotope and subsequent determinations of the 18 O profiles. After sequential 16 O 2 / 18 O
Segregation of Ca in Si has been studied using SIMS and RBS. Pronounced Ca profile broadening is observed during SIMS measurements with oxygen ions under bombardment conditions, yielding the formation of a stoichiometric oxide layer at the surface. Additional profiling through the SiO 2 /Si interfac