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Iron accumulation at the Si-SiO2 interface and possible reduction of SiO2

✍ Scribed by Y. Kamiura; F. Hashimoto; M. Iwami


Publisher
Elsevier Science
Year
1990
Tongue
English
Weight
338 KB
Volume
41-42
Category
Article
ISSN
0169-4332

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The peculiarities of Si/SiO2 interfaces
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Si-rich-SiO 2 layers with excess silicon of 45-50% were grown by RF magnetron co-sputtering from pure SiO 2 and Si targets and were studied by Raman scattering, HRTEM, electron-paramagnetic resonance and X-ray diffraction (XRD) methods as well as by photo-voltage technique operated at different temp