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The reduction of efficiency droop by Al0.82In0.18N/GaN superlattice electron blocking layer in (0001) oriented GaN-based light emitting diodes

✍ Scribed by Chung, Roy B.; Han, Changseok; Pan, Chih-Chien; Pfaff, Nathan; Speck, James S.; DenBaars, Steven P.; Nakamura, Shuji

Book ID: 115537049
Publisher: American Institute of Physics
Year: 2012
Tongue: English
Weight: 744 KB
Volume: 101
Category: Article
ISSN: 0003-6951
DOI: 10.1063/1.4756791

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