Droop Improvement in InGaN/GaN Light-Emitting Diodes by Polarization Doping of Quantum Wells and Electron Blocking Layer

✍ Scribed by Devi, Vanita; Kumar, Ravindra; Joshi, B. C.

• Book ID: 127268111
• Publisher: Institute of Electrical and Electronics Engineers
• Year: 2015
• Tongue: English
• Weight: 874 KB
• Volume: 11
• Category: Article
• ISSN: 1551-319X
• DOI: 10.1109/jdt.2014.2359229